CESD5V0D3 ZA

CESD5V0D3 ZA

  • 厂商:

    JIANGSU(长晶)

  • 封装:

    SOD-323

  • 描述:

    ESD抑制器/TVS二极管 单向 5V 15A SOD-323

  • 数据手册
  • 价格&库存
CESD5V0D3 ZA 数据手册
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes CESD5V0D3 SOD-323 ESD Protection Diode DESCRIPTION The CESD5V0D3 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. FEATURES z Stand−off Voltage:5.0 V z Low Leakage z Response Time is Typically < 1 ns z ESD Rating of Class 3 (> 16 kV) Per Human Body Model z IEC61000−4−2 Level 4 ESD Protection z These are Pb−Free Devices Maximum Ratings @Ta=25℃ Parameter Symbol IEC61000−4−2(ESD) ESD Voltage Air Contact ±15 ±8.0 per human body model Total Power Dissipation on FR-5 Board (Note 1) Thermal Resistance Junction−to−Ambient Lead Solder Temperature − Maximum (10 Second Duration) Junction and Storage Temperature Range Limit Unit KV 30 KV PD 200 mW RΘJA 625 ℃/W TL 260 ℃ Tj, Tstg -55 ~ +150 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. B.Mar,2013 ELECTRICAL CHARACTERISTICS (Ta= 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Max. Capacitance @VR=0 and f =1MHz ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types) VRWM IR (μA) Device Device* VBR (V) VC @ IT(Note 2) VC (V) Ppk + C (W) (pF) IPP(A) + IT + (V) @ VRWM Max Max Min Max mA V Max Max Max Typ 5.0 10 6.2 7.3 1.0 9.8 15 15.5 350 350 @IPP = 5 A @Max IPP Marking CESD5V0D3 ZA *Other voltages available upon request. +Surge current waveform per Figure 6. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. B.Mar,2013
CESD5V0D3 ZA 价格&库存

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CESD5V0D3 ZA
  •  国内价格
  • 18+0.13999

库存:18

CESD5V0D3 ZA
  •  国内价格
  • 1+0.10020
  • 3000+0.07950

库存:19

CESD5V0D3 ZA
  •  国内价格
  • 10+0.22740
  • 100+0.16250
  • 200+0.13540
  • 3000+0.11840

库存:14981